logo
HOME
Purchase of parts
Linear Regulator
Zener Diode
MOSFET
RF Transistor

HGT1S10N120BNS Datasheet, Fairchild Semiconductor

HGT1S10N120BNS igbt equivalent, 35a/ 1200v/ npt series n-channel igbt.

HGT1S10N120BNS Avg. rating / M : 1.0 rating-11

datasheet Download

HGT1S10N120BNS Datasheet

Features and benefits

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal fo.

Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

Image gallery

HGT1S10N120BNS Page 1 HGT1S10N120BNS Page 2 HGT1S10N120BNS Page 3

TAGS
HGT1S10N120BNS
35A
1200V
NPT
Series
N-Channel
IGBT
HGT1S11N120CNS
HGT1S12N60A4DS
HGT1S12N60A4S
Fairchild Semiconductor
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts